Basic research contributes to technological innovation by deepening our understanding of the interplay between antiferromagnetism, band topology, and strong electron interactions. Credit: Ray et al ...

A large, unconventional anomalous Hall resistance in a new magnetic semiconductor in the absence of large-scale magnetic ordering has been demonstrated, validating a recent theoretical prediction.

In-plane magnetic fields are responsible for inducing anomalous Hall effect in certain films, report researchers. By studying how these fields change electronic structures, the team discovered a large ...

The quantum anomalous Hall effect (QAHE) has unique advantages in topotronic applications, but it is still a key scientific challenge to realize the QAHE with tunable magnetic and topological ...

A mysterious magnetic effect that causes the path that electrons take through a material to bend—called the anomalous Hall effect—has been elucidated in a new mathematical analysis by two RIKEN ...

Chromium(III) Telluride (Cr 2 Te 3) is an interesting material for (ferro)magnetic applications, with Yao Wen and colleagues reporting in a 2020 Nano Letters paper that they confirmed it to show ...

Outstanding research results in the quantum anomalous Hall effect and femtosecond physics Although the prefixes ‘nano’, ‘femto’ and ‘atto’ suggest something small, they often conceal significant ...

Basic research contributes to technological innovation by deepening our understanding of the interplay between antiferromagnetism, band topology, and strong electron interactions. An international ...

(Nanowerk News) A large, unconventional anomalous Hall resistance in a new magnetic semiconductor in the absence of large-scale magnetic ordering has been demonstrated by Tokyo Tech materials ...