Abstract: In this work, for the first time, the Flip FET (FFET), a novel stacked transistor technology with self-aligned active and interconnects on both sides of wafer, is proposed and experimentally ...
Abstract: In this letter, we present a compact model of ferroelectric field-effect-transistor (FEFET). The model consists of a ferroelectric (FE) capacitor model and a Berkeley Short-channel IGFET ...
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