Abstract: In this letter, we present a compact model of ferroelectric field-effect-transistor (FEFET). The model consists of a ferroelectric (FE) capacitor model and a Berkeley Short-channel IGFET ...
Abstract: Two-transistor-zero-capacitor (2T0C) DRAM cell has been proposed and extensively investigated as a memory device for processing-in-memory (PIM) applications. In this two-part article, we ...
School of Integrated Circuits & Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China Institute of Marine Science and Technology, ...
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