Abstract: We report on the presence of a Negative Differential Resistance (NDR) in a Gate-All-Around Field Effect Transistor (GAAFET) with 1D nanowires or nanotubes as the active conducting channel.
Abstract: This paper presents a new method for real-time in-situ temperature measurement and thermal resistance extraction of AlGaN/GaN high electron mobility transistors (HEMTs) based on Schottky ...
A new study suggests that the weather may have an effect on how people feel. Published in the Journal of Affective Disorders, ...
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